GBU10MR_B0_100A1 datasheet, PDF

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GBU10MR_B0_100A1: DescriptionReverse peak voltage: 1000V Average rectified current (Io): 10A Forward voltage drop (Vf): 1.1V @ 10A; CategoryDiscrete semiconductor Rectifier bridge; File Size137KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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GBU10MR_B0_100A1 Overview

Reverse peak voltage: 1000V Average rectified current (Io): 10A Forward voltage drop (Vf): 1.1V @ 10A

GBU10MR_B0_100A1 Parametric

Parameter Name	Attribute value
Reverse peak voltage	1000V
Average rectified current (Io)	10A
Forward voltage drop (Vf)	1.1V @ 10A

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...GBU10G~GBU10M

Glass Passivated Bridge Rectifiers

VOLTAGE

400 to 1000 Volt

CURRENT

FEATURES

• UL Recognized File #E228882

• Plastic material has Underwriters Laboratory

Flammability Classification 94V-O

• Ideal for printed circuit board

• Reliable low cost construction utilizing molded plastic technique.

• Lead free in compliance with EU RoHS 2.0

• Glass passivated chip junction

10 Ampere

GBU

Unit: Inch(mm)

MECHANICAL DATA

• Case: GBU

•Terminals: Leads solderable per MIL-STD-750, Method 2026

• Polarity: As marked on body

• Mounting torque: 5 inch-lbs. Max.

• Weight: 4g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified.

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current,

8.3 ms single half sine-wave

Rating of fusing ( t<8.3ms) (Note 1)

Maximum instantaneous forward

voltage per diode

= 5 A

= 10 A

Maximum reverse current

@ rated V

=25°C

=125°C

SYMBOL

RRM

RMS

GBU

10G

400

280

400

GBU

10J

600

420

600

220

200

1.1

500

θ JA

θ JC

STG

- 55 to +150

°C/W

°C

GBU

10K

800

560

800

GBU

10M

1000

700

1000

UNIT

F(AV)

FSM

μA

Typical junction capacitance (Note 2)

Typical thermal resistance

(Note 3)

(Note 4)

Operating junction temperature range

Storage temperature range

Note 1: Non-repetitive, for t＞1ms and＜8.3ms.

Note 2: Measured at 1MHz and applied Reverse bias of 4V DC

Note 3: Products installed on the PCB, Without heatsink。

Note 4: Products installed on aluminum plate heatsink。

July 25,2017-REV.07

Page 1

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