GBL005 datasheet, PDF - EEWORLD Datasheet

GBL005: DescriptionSingle Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor; File Size231KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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Single Phase 4.0A Silicon Bridge Rectifiers Single Phase 4.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 4.0A Silicon Bridge Rectifiers

Product model: GBL005

product features:

Surge overload rating -150 amperes peak

Ideal for printed circuit board

plastic material has UL Flammablilty Classification 94V-0

Mounting position:Any

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 50V

Maximum RMS Voltage VRMS voltage effective value: 35V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 50V

Maximum Average Forward Rectified Current @TC=50℃ IF(AV) Maximum forward current: 4.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 150 A

Maximum Instantaneous Forward Voltage @ 4.0A VF Maximum forward voltage drop: 1.1 V

Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA

DC blocking voltage @TA= 125℃ IR Maximum reverse leakage current: 1.0mA

Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 40 ℃/W ; RθJC Thermal resistance coefficient: 12 ℃/W

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: GBL

Parameter Name	Attribute value
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
Maximum non-repetitive peak forward current	150 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	4 A
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Base Number Matches	1

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