GBJ2006B1 datasheet, PDF - EEWORLD Datasheet

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GBJ2006B1: DescriptionBridge Rectifier Diode,; CategoryDiscrete semiconductor diode; File Size246KB，4 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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GBJ2006B1 Overview

Bridge Rectifier Diode,

GBJ2006B1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compliant
ECCN code	EAR99

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GBJ20005 THRU GBJ2010

RoHS

COMPLIANT

Bridge Rectifiers

Features

● UL recognition, file #E230084

● Thin single in-line package

● High surge current capability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances, office

equipment, industrial automation applications.

Mechanical Data

●

Package:

6KBJ

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

●

Terminals:

Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Polarity:

As marked on body　

■

Maximum Ratings

(Ta=25℃ Unless otherwise specified

）

PARAMETER

Device marking code

Repetitive peak reverse voltage

Average rectified output

current @60Hz sine

wave, R-load

With heatsink

Tc =87℃

VRRM

SYMBOL

UNIT GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010

GBJ20005 GBJ2001

100

GBJ2002

200

GBJ2004

400

20.0

3.5

IFSM

Tstg

Vdis

Tor

℃

kgꞏcm

280

325

-55 ~+150

2.5

GBJ2006

600

GBJ2008

800

GBJ2010

1000

Without heatsink

Ta =25℃

Surge(non-repetitive)forward current

@60Hz half sine wave, 1 cycle, Tj=25℃

Current squared time

@1ms≤t≤8.3ms Tj=25℃, Rating of per diode

Storage temperature

Junction temperature

Dielectric strength

@terminals to case, AC 1 minute

Mounting torque

@recommend torque：5kgꞏcm

■Electrical

Characteristics

（T

a=25℃ Unless otherwise specified）

PARAMETER

Maximum instantaneous forward

voltage drop per diode

Maximum DC reverse current at

rated DC blocking voltage per diode

SYMBOL UNIT

IRRM

μA

TEST

GBJ20005 GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010

CONDITIONS

IFM=10.0A

VRM=VRR

1.00

1/4

S-B035

Rev. 2.4, 21-Nov-19

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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