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GBJ1510 -BP

Description
Reverse peak voltage: 1000V Average rectified current (Io): 15A Forward voltage drop (Vf): 1.1V @ 12.5A
CategoryDiscrete semiconductor    Rectifier bridge   
File Size213KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
Download Datasheet Parametric View All

GBJ1510 -BP Overview

Reverse peak voltage: 1000V Average rectified current (Io): 15A Forward voltage drop (Vf): 1.1V @ 12.5A

GBJ1510 -BP Parametric

Parameter NameAttribute value
Reverse peak voltage1000V
Average rectified current (Io)15A
Forward voltage drop (Vf)1.1V @ 12.5A

GBJ1510 -BP Preview

Download Datasheet
GBJ15005 THRU GBJ1510
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 15.0 Amperes
KBJ6
30.0
+
0.3
4.6
+
0.2
3.6
+
0.2
3.2
+
0.2
3.5
+
0.2
FEATURES
This series is UL listed under the Recognized
Component Index, file number E142814
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500V
RMS
Ideal for printed circuit boards
High surge current capability
20.0
+
0.3
2.5
+
0.2
2.2
+
0.2
+
~ ~ _
5
11.0
+
0.2
4
+
0.2
MECHANICAL DATA
Case : Molded plastic body over passivated junctions
Terminals : Plated leads solderable per MIL-STD-750,
Method 2026
Polarity : Polarity symbols molded on body
Mounting Position : Any
(3)
Mounting Torque : 5 in-lbs max.
Weight : 0.26 ounce, 7.0 grams (approx)
17.5
+
0.5
1.0
+
0.1
10
+
0.2
7.5
+
0.2 7.5
+
0.2
0.7
+
0.1
2.7
+
0.2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase,half wave 60Hz,resistive or inductive load,for current capacitive load, derate by 20%.
Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
C
=50 C (Note 1,2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage dorp
per bridge element at 12.5A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Isolation voltage from case to leads
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
SYMBOLS
GBJ
15005
GBJ
1501
GBJ
1502
GBJ
1504
GBJ
1506
GBJ
1508
GBJ
1510
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
15
600
420
600
800
560
800
1000 VOLTS
700 VOLTS
1000 VOLTS
Amps
Amps
A
2
s
Volts
µ
A
mA
V
AC
C/W
C
C
I
FSM
I
2
t
V
F
I
R
V
ISO
R
θ
JA
T
J
T
STG
240.0
240
1.1
10
1.0
2500
0.8
-55 to +150
-55 to +150
Notes:
(1) Device mounted on 250mm x 250mm x 20mm aluminum plate heatsink.
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