G80N03 datasheet, PDF - EEWORLD Datasheet

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G80N03: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta=25°C): 60W (Tc) Type: N-channel N tube, 30V, 80A; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，6 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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G80N03 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 80A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 6mΩ @ 30A, 10V Maximum power dissipation (Ta=25°C): 60W (Tc) Type: N-channel N tube, 30V, 80A

G80N03 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	80A(Tc)
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	6mΩ @ 30A,10V
Maximum power dissipation (Ta=25°C)	60W(Tc)
type	N channel

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GOFORD

DESCRIPTION

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Information

PART

NUMBER BRAND

PACKAGE

TO-252-2L

80N03

OGFD

Uninterruptible

Power upply

www.goford.cn

TEL：0755-29961099

FAX

：0755-29961466

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