G120N04A datasheet, PDF - EEWORLD Datasheet

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G120N04A: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4mΩ @ 20A, 10V Maximum power consumption Dispersed (Ta=25°C): 130W (Tc) Type: N channel N channel, 40V, 120A, 3.2mΩ@10V; CategoryDiscrete semiconductor MOS (field effect tube); File Size2MB，5 Pages; ManufacturerGoford Semiconductor; Websitehttp://www.goford.cn/; Shenzhen Gufeng Electronics Co., Ltd. GOFORD SEMICONDUCTOR was established in Hong Kong in 1995. Now it has established branches, offices and agency networks all over the world. National high-tech enterprises. GOFORD focuses on the research and development, production and sales of semiconductor power components MOSFET field effect tubes. The company provides high-reliability products through strict quality management system and assessment; continuous technological research and development innovation to meet the needs of market segments and product cost-effectiveness; with a global layout vision, it continues to promote the popularity of the GOFORD brand in the field of power devices. GOFORD is committed to creating a world-renowned power device brand!

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G120N04A Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 4mΩ @ 20A, 10V Maximum power consumption Dispersed (Ta=25°C): 130W (Tc) Type: N channel N channel, 40V, 120A, 3.2mΩ@10V

G120N04A Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	40V
Continuous drain current (Id) at 25°C	120A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	4mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)	130W(Tc)
type	N channel

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