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FR3A_09

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size122KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB

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FR3A~FR3J
FAST SWITCHING SURFACE MOUNT RECTIFIER
VOLTAGE
50 to 600 Volts
CURRENT
3.0 Ampere
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Fast Recovery times for high efficiency
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• High temperature soldering : 260°C /10 seconds at terminals
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA-481)
Weight: 0.0082 ounce, 0.2325 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e R e c t i f i e d C ur r e nt a t T
L
= 7 5
O
S YM B O L
V
RRM
V
RMS
V
D C
C
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J L
T
J
, T
S T G
F R3 A
50
35
50
F R3 B
100
70
100
F R3 D
200
140
200
3 .0
100
1 .3
1 .0
200
150
60
15
-5 0 to +1 5 0
F R3 G
400
280
400
F R3 J
600
420
600
U N IT S
V
V
V
A
A
V
µ
A
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
M a xi m um J unc t i o n c a p a c i t a nc e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a t i n g
250
ns
pF
O
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
STAD-MAR.03.2009
1
PAGE . 1
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