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ESD3Z5.0C

CategoryDiscrete semiconductor    ESD diode   
File Size2MB,3 Pages
ManufacturerANBON SEMICONDUCTOR
Websitehttp://www.formosagr.com/

Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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ESD3ZxxC SERIES
Surface Mount Bi-Directional TVS
For ESD Protection Diode - 3.3V -
36
V
Features
This series is designed for average power 320W approximated
ESD protection, different V
RWM
, different peak pulse power available.
Protects one I/O or power line .
Low clamping voltage .
Working voltages: 3.3V, 5.0V, 12V, 15V, 18V, 24V, 36V.
Low leakage current .
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.ESD3Z3.3C-H.
SOD-323
Package outline
0.053(1.35)
0.045(1.15)
0.071(1.80)
0.063(1.60)
IEC compatibility
IEC61000-4-2 (ESD) ±25kV (air), ±20kV (contact)
IEC61000-4-4 (EFT) 40A (5/50ηs)
IEC61000-4-5 (Lightning) 8 A (8/20us)
0.003(0.08)
0.016(0.40)
0.016(0.40)
0.010(0.25)
0.039(1.00)
0.031(0.80)
Applications
Cell Phone Handsets and Accessories
Microprocessor based equipment
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
0.106(2.70)
0.091(2.30)
Dimensions in inches and (millimeters)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOD-323
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Mounting Position : Any
Maximum ratings
(at T =25 C unless otherwise noted)
o
A
PARAMETER
Total power dissipation
CONDITIONS
Peak pulse power (tp = 8/20us)
SYMBOL
P
PP
VALUE
320
UNIT
W
o
Operating junction temperature range
Storage temperature range
T
J
T
STG
-55 to +150
-55 to +150
C
C
o
Electrical characteristics
(at T =25 C unless otherwise noted)
o
A
Part No.
V
RWM
(V)
(Max.)
I
R
(uA)
@V
RWM
(Max.)
200
10
1
1
1
1
1
V
BR
(V)
@I
T
(Note 2)
(Min.)
4.0
6.0
13.3
16.7
19.0
26.7
40.0
I
T
(mA)
V
C
(V)
@I
PP
=1.0A
(Max.)
I
PP
(A)
(Max.)
25.0
24.0
13.0
9.0
8.0
6.0
4.0
V
C
(V)
@ I
PP
(Max.)
16.0
17.0
25.0
32.0
35.0
52.0
75.0
C
J
(pF)
(Max.)
350
260
110
100
90
75
35
ESD3Z3.3C
ESD3Z5.0C
ESD3Z12C
ESD3Z15C
ESD3Z18C
ESD3Z24C
ESD3Z36C
3.3
5.0
12
15
18
24
36
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.0
9.8
19.0
24.0
28.0
43.0
60.0
Note 1. Surge current waveform per Fig.1
2. V
BR
is measured with a pulse test current I
T
at an ambient temperature of 25°C.
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2017/11/16
Revision
E
Page.
3
Page 1
AS-3110017
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