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ES3M

Description
Rectifier Diode, 1 Element, 3A, 1000V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size170KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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ES3M Overview

Rectifier Diode, 1 Element, 3A, 1000V V(RRM)

ES3M Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.035 µs
surface mountYES
Base Number Matches1

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ES3A thru ES3M
Super Fast Surface Mount Rectifiers
Reverse Voltage 50 to 1000 Volts Forward Current 3.0 Amperes
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Superfast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
250
o
C/10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Classification 94V-O
Mechanical Data
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Weight: 0.007 ounce, 0.21 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
S ee F i g. 1
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) @T
L
=100
o
C
Maximum instantaneous forward voltage @ 3.0A
Maximum DC reverse current
at rated DC blocking voltage
@ T
A
=25 C
@ T
A
=100
o
C
o
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
R
θ
JL
T
J
T
STG
ES
3A
50
35
50
ES
3B
100
70
100
ES
3C
150
105
150
ES
3D
200
140
200
ES
3F
300
210
300
3.0
ES
3G
400
280
400
ES
3J
600
420
600
ES
3K
800
560
800
ES
3M
1000
700
1000
Units
Volts
Volts
Volts
Amps
100.0
0.95
10.0
500
35
50
47
12
-55 to +150
-55 to +150
40
1.3
1.7
Amps
Volts
uA
uA
nS
pF
o
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
C/W
o
C
C
o
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Units Mounted on P.C.B. with 0.31 x 0.31" (8.0 x 8.0mm) Copper Pad Areas
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