ES1AF-ES1JF
SURFACE MOUNT SUPER FAST RECTIFIER
FEATURES
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability Classification Rating 94V-0
SMAF
MECHANICAL DATA
10
Case: SMAF Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 27mg (approx.)
Cathode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive
load. For capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at T
A
=75 °C
Peak Forward Surge Current 8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC)
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current at
Rated DC Blocking Voltage
T
A
= 25 °C
T
A
=100 °C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
T
J, TS
0.95
5.0
100.0
35
15.0
60.0
- 50 to + 150
ES1AF
50
35
50
ES1BF
100
70
100
ES1CF
150
105
150
ES1DF
200
140
200
1.0
30.0
1.25
1.7
ES1EF
300
210
300
ES1GF
400
280
400
ES1JF
600
420
600
Unit
V
V
V
A
A
V
µA
nS
pF
°C/W
°C
Maximum reverse recovery time
(NOTE1)
Typical Junction Capacitance
(NOTE2)
Maximum Thermal Resistance
(NOTE3)
Operating and Storage Temperature Range
Note: 1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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ES1AF-ES1JF
SURFACE MOUNT SUPER FAST RECTIFIER
Typical Characteristics
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
INSTANTANEOUS FORWARD
CURRENT,AMPERES
20
10
T
J
=25 C
PULSE WIDTH=300
µs
1%DUTY CYCLE
100
1
10
TJ=100 C
1
0.1
ES1AF-ES1DF
ES1EF-ES1GF
ES1JF
0
0.4
0.8
1.2
1.6
1.8
0.1
TJ=25 C
0.01
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
JUNCTION CAPACITANCE, pF
200
100
T
J
=25 C
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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Microcontroller MCU
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