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ER504_AY_10001

Description
Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.25V @ 5A VR=400V IO=5A VF=1.25V@ 5A TRR=35ns
CategoryDiscrete semiconductor    diode   
File Size99KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER504_AY_10001 Overview

Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 400V Average rectified current (Io): 5A Forward voltage drop (Vf): 1.25V @ 5A VR=400V IO=5A VF=1.25V@ 5A TRR=35ns

ER504_AY_10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionROHS COMPLIANT, HERMETIC SEALED, PLASTIC PACKAGE-2
Reach Compliance Codenot_compliant
ECCN codeEAR99
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

ER504_AY_10001 Preview

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ER500~ER506
GLASS PASSIVATED JUNCTION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Superfast recovery times-epitaxial construction.
• Low forward voltage, high current capability.
• Exceeds environmental standards of MIL-S-19500/228.
• Hermetically sealed.
• Low leakage.
• High surge capability.
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
Lead free in compliance with EU RoHS 2011/65/EU directive
.375(9.5)
.285(7.2)
1.0(25.4)MIN.
.052(1.3)
.048(1.2)
50 to 600 Volts
CURRENT
5.0 Amperes
DO-201AD
Unit: inch(mm)
MECHANICALDATA
• Case: Molded plastic, DO-201AD
• Terminals: Axial leads, solderable to MIL-STD-750,Method 2026
• Polarity: Color Band denotes cathode end
• Mounting Position: Any
• Weight: 0.0395 ounce, 1.122 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 5 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
E R 5 0 0 E R 5 0 1 E R 5 0 1 A E R 5 0 2 E R 5 0 3 E R 5 0 4 E R 5 0 6
U N I T S
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J A
T
J
, T
S T G
0 .9 5
1 .0
300
35
65
20
-5 5 to +1 5 0
O
50
35
50
100
70
100
1.0(25.4)MIN.
.210(5.3)
.188(4.8)
150
105
150
200
140
200
5 .0
150
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1 .2 5
1 .7 0
V
µ
A
ns
pF
C /
W
C
O
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
STAD-MAR.06.2009
PAGE . 1
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