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ER200_04

Description
2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15

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DATA SHEET
ER200~ER206
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
Superfast recovery times-epitaxial construction.
Low forward voltage, high current capability.
Exceeds environmental standards of MIL-S-19500/228.
Hermetically sealed.
Low leakage.
High surge capability.
Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Pb free product are available :
99% Sn above can meet Rohs
environment substance directive request
.140(3.6)
.034(.86)
50 to 600 Volts
CURRENT
2.0 Ampere
DO-15
Unit: inch(mm)
.300(7.6)
1.0(25.4)MIN.
.028(.71)
.230(5.8)
MECHANICALDATA
Case: Molded plastic, DO-15
Terminals: Axial leads, solderable to MIL-STD-202G,Method 208
Polarity: Color Band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
A
= 5 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 2 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
A
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
A
= 1 2 5
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l J u n c t i o n R e s i s t a n c e ( N o t e 3 )
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
0 .9 5
5 .0
200
35
22
40
- 5 5 TO + 1 5 0
O
E R2 0 0
50
35
50
E R2 0 1
100
70
100
E R2 0 1 A
150
105
150
1.0(25.4)MIN.
.104(2.6)
E R2 0 2
200
140
200
2 .0
50
E R2 0 3
300
210
300
E R2 0 4
400
280
400
E R2 0 6
600
420
600
U N IT S
V
V
V
A
A
1 .2 5
1 .7 0
V
I
R
uA
T
RR
C
J
Rθ J A
T
J
, T
S TG
ns
pF
C / W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted
STAD-APR.09.2004
PAGE . 1
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