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ER2003CT

Description
20 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size78KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER2003CT Overview

20 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB

ER2003CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage300 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

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ER2000CT~ER2006CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
.058(1.47)
50 to 600 Volts
CURRENT
20.0 Amperes
• In compliance with EU RoHS 2002/95/EC directives
.042(1.07)
MECHANICALDATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at Tc=90
o
C
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 10A
Maximum DC Reverse Current T
J
=25
O
C
at Rated DC Blocking VoltageT
J
=100
O
C
Maximum Reverse Recovery Time (Note 2)
Typical Junction capacitance (Note 1)
Typical thermal Resistance (Note 3)
Operating Junction and Storage Temperature Range
SYMBOL
V
R R M
V
R M S
V
D C
I
F (A V )
I
F S M
V
F
I
R
ER2000CT
ER2001CT
ER2001ACT
ER2002CT
ER2003CT
ER2004CT
ER2006CT
UNITS
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
20.0
150
300
210
300
400
280
400
600
420
600
0.95
1
500
35
85
3.0
-50 to +150
1.3
1.7
V
µA
t
rr
C
J
R
θ
J c
T
J
,T
S T G
50
100
ns
pF
O
C/W
O
C
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-JUL.22.2009
1
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