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ER1600FCT_T0_10001

Description
Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size101KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1600FCT_T0_10001 Overview

Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

ER1600FCT_T0_10001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionITO-220AB, 3 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current125 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage50 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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ER1600FCT~ER1606FCT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
50 to 600 Volts
16.0 Amperes
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
Lead free in comply with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
.027(.67)
.022(.57)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a x i m u m A v e r a g e F o r w a r d C u r r e n t a t Tc = 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 8 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
E R1 6 0 0 F C T E R1 6 0 1 F C T
E R1 6 0 1 A F C T
E R1 6 0 2 F C T E R1 6 0 3 F C T E R1 6 0 4 F C T E R1 6 0 6 F C T
U N IT S
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
1 6 .0
125
300
210
300
400
280
400
600
420
600
0 .9 5
1 .0
500
35
62
1 .3 0
1.70
V
µA
t
rr
C
J
R
θ
J C
T
J
, T
S T G
50
ns
pF
O
3 .0
-5 0 to +1 5 0
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-MAR.06.2009
PAGE . 1
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