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ER1600CT_09

Description
16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size77KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1600CT_09 Overview

16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

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ER1600CT~ER1606CT
ISOLATION SUPERFAST RECOVERY RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Epitaxial chip construction.
• In compliance with EU RoHS 2002/95/EC directives
.058(1.47)
.042(1.07)
50 to 600 Volts
CURRENT
16.0 Amperes
MECHANICALDATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICSS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a x i m u m A v e r a g e F o r w a r d C u r r e n t a t Tc = 9 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 8 A
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g a n d S t o r a g e Te m p e r a t u r e R a n g e
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
S YM B O L
V
RRM
V
RMS
V
D C
I
F ( A V )
I
F S M
V
F
I
R
0 .9 5
1 .0
500
35
62
O
E R1 6 0 0 C T E R1 6 0 1 C T E R1 6 0 1 A C T E R1 6 0 2 C T E R1 6 0 3 C T E R1 6 0 4 C T E R1 6 0 6 C T
U N IT S
V
V
V
A
A
50
35
50
100
70
100
150
105
150
200
140
200
1 6 .0
125
300
210
300
400
280
400
600
420
600
1 .3 0
1.70
V
µ
A
t
rr
C
J
R
θ
J C
T
J
, T
S T G
50
ns
pF
C /
W
C
3 .0
-5 0 to +1 5 0
O
STAD-MAR.06.2009
PAGE . 1
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