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ER1003F_T0_00001

Description
Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size76KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1003F_T0_00001 Overview

Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

ER1003F_T0_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PSFM-T2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage300 V
Maximum reverse current1 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

ER1003F_T0_00001 Preview

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ER1000F~ER1006F
ISOLATION SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.272(6.9)
0.248(6.3)
50 to 600 Volts
CURRENT
10 Amperes
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Flame Retardant Epoxy Molding Compound
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency
• Low forwrd voltge, high current capability
• High surge capacity
• Super fast recovery times, high voltage
• Glass passivation junction
• Lead free in comply with EU RoHS 2002/95/EC directives
0.063(1.6)MAX.
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AC Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.05 ounces, 1.56grams.
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.177(4.5)
0.137(3.5)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a x i m u m A v e r a g e F o r w a r d C u r r e n t a t Tc = 1 0 0
O
C
P e a k F o r w a r d S ur g e C ur r e nt , 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 0 A , p e r e l e m e nt
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 1 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
E R 1 0 0 0 F E R 1 0 0 1 F E R 1 0 0 1 A F E R 1 0 0 2 F E R 1 0 0 3 F E R 1 0 0 4 F E R 1 0 0 6 F
U N I T S
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
t
rr
C
J
R
θ
J C
T
J
, T
S TG
35
62
O
50
35
50
100
70
100
150
105
150
200
140
200
1 0 .0
150
300
210
300
400
280
400
600
420
600
V
V
V
A
A
0 .9 5
1 .0
500
1 .3 0
1.7
V
μA
50
ns
pF
C /
W
C
3 .0
-5 5 to +1 5 0
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
STAD-AUG.12.2009
2
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