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ER1001CT_10001

Description
Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ER1001CT_10001 Overview

Rectifier Diode, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB,

ER1001CT_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionR-PSFM-T3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage100 V
Maximum reverse current1 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

ER1001CT_10001 Preview

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ER1000CT~ER1006CT
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• Super fast recovery times, high voltage.
• Lead free in comply with EU RoHS 2011/65/EU directives
50 to 600 Volts
CURRENT
10 Amperes
MECHANICAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859grams.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Ma xi mum Re curre nt P e a k R e ve rse V o lta g e
Ma xi mum R MS Vo lta g e
Ma xi mum D C B lo ck i ng Vo lta g e
Ma xi mum A ve r a g e F o rwa r d C urre nt a t T
C
= 1 0 0
O
C
P e a k F o rwa rd S urg e C urre nt, 8 .3 ms s i ng le ha lf si ne -wa ve
sup e ri mp o se d o n ra te d lo a d (JE D E C me tho d )
Ma xi mum F o rwa rd Vo lta g e a t 5 A , p e r e le me nt
Ma xi mum D C Re ve rse C ur re nt a t Ra te d D C B lo c ki ng T
J
=2 5
O
C
Vo lta g e
T
J
=1 0 0
O
C
Ma xi mum R e ve rs e Re co ve ry Ti me (No te 2 )
Typ i ca l J unc ti o n C a p a c i ta nce (No te 1 )
Typ i ca l T he rma l Re si sta nce
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
S YMB OL
E R1 0 00 C T E R10 0 1C T E R1 00 1 A C T E R10 0 2C T E R1 0 03 C T E R1 0 04 C T E R10 0 6C T
UNITS
V
RRM
V
RMS
V
DC
I
F ( AV )
I
F S M
V
F
I
R
t
rr
C
J
R
J
C
T
J
,T
S TG
35
62
3
- 5 5 to +1 5 0
0 .9 5
1
500
50
50
35
50
100
70
100
150
105
150
200
140
200
10
150
1 .3
1.7
300
210
300
400
280
400
600
420
600
V
V
V
A
A
V
A
ns
pF
O
C /
W
C
O
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, Irr=.25A.
3. Both Bonding and Chip structure are available.
January 9 2013-REV.06
PAGE . 1
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