DTA123YE datasheet, PDF - EEWORLD Datasheet

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DTA123YE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size132KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Environmental Compliance; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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DTA123YE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

DTA123YE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	JCET
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	33
Number of components	1
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Transistor component materials	SILICON

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

Digital transistors (built-in resistors)

DTA123YE/ DTA123YUA/

DTA123YCA/DTA123YKA/DTA123YSA

DIGITAL TRANSISTOR (PNP)

Features

1) Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with complete isolation

to allow negative biasing of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation, making device design easy.

PIN CONNENCTIONS AND MARKING

DTA123YE

DTA123YUA

DTC114EUA

SOT-323

SOT-523

Addreviated symbol: 52

DTA123YKA

DTA123YCA

SOT-23-3L

SOT-23

Addreviated symbol: 52

DTA123YSA

TO-92S

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