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DSR0.3M S03M

Description
DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 300mA Forward voltage drop (Vf): 1.1V @ 300mA 1000V, 0.3A, VF=1.1V@0.3A
CategoryDiscrete semiconductor    General diode   
File Size796KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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DSR0.3M S03M Overview

DC reverse withstand voltage (Vr): 1kV Average rectified current (Io): 300mA Forward voltage drop (Vf): 1.1V @ 300mA 1000V, 0.3A, VF=1.1V@0.3A

DSR0.3M S03M Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)1kV
Average rectified current (Io)300mA
Forward voltage drop (Vf)1.1V @ 300mA

DSR0.3M S03M Preview

Download Datasheet
DSR0.3A THRU DSR0.3M
Surface Mount Standard Rectifiers
Reverse Voltage - 50 to 1000 Volts
Forward Current - 0.3 Ampere
Features
SOD-123FL
Cathode Band
Top View
2.8
±
0.1
1.3± 0.15
0.10-0.30
0.6
±
0.25
Low profile space
Ideal for automated placement
Glass passivated chip junctions
Low forward voltage drop
Low leakage current
High forward surge capability
High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
1.0±
0.2
1.8± 0.1
Mechanical Date
Case:
JEDEC SOD-123FL molded plastic
body over glass passivated chip
Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity:
Laser band denotes cathode end
Weight:
0.017gram
3.7
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
S03A
50
35
50
S03B
100
70
100
S03D
200
140
200
S03G
400
280
400
0.3
S03J
600
420
600
S03K
800
560
800
S03M
1000
700
1000
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
V
RRM
Maximum RMS voltage
V
RMS
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
I
(AV)
at T
A
=65 C (NOTE 1)
Peak forward surge current
I
FSM
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=25 C
V
F
Maximum instantaneous forward voltage at 0.3A
Maximum DC reverse current
T
A
=25 C
I
R
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 2)
C
J
Typical thermal resistance (NOTE 3)
R
θ
JA
Operating junction and storage temperature range T
J
,
T
STG
15.0
1.1
5.0
50.0
4
220
-55 to +150
Amps
Volts
µ
A
pF
K/W
C
Note1: Mounted on FR-4 P.C.B. With 0.9x1.5 mm copper pad areas (≈35
μm
thick)
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