DB102S datasheet, PDF - EEWORLD Datasheet

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DB102S: DescriptionSingle Phase 1.0A Silicon Bridge Rectifiers Single Phase 1.0A Silicon Bridge Rectifiers; CategoryDiscrete semiconductor diode; File Size252KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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DB102S Overview

Single Phase 1.0A Silicon Bridge Rectifiers Single Phase 1.0A Silicon Bridge Rectifiers

Features

Product Name: Single Phase 1.0A Silicon Bridge Rectifiers

Product model: DB102S

product features:

UL Recognized File # E-230084

Ideal for printed circuit boards

Reliable low cost construction technique results in inexpensive product

High temperature soldering guaranteed:

250℃ / 10 seconds / 0.375” ( 9.5mm )

lead length at 5 lbs., ( 2.3 kg ) tension

Mechanical data:

Case: Molded plastic

Lead: solder plated

Polarity: As marked

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

product data:

Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 100V

Maximum RMS Voltage VRMS Voltage effective value: 70V

Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 100V

Maximum Average Forward Rectified Current @TA = 50℃ I(AV) Maximum forward current: 1.0 A

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM Maximum forward surge current: 50 A

Maximum Instantaneous Forward Voltage @ 1.5 A VF Maximum forward voltage drop: 1.1 V

Maximum DC Reverse Current @ TA = 25 ° C IR Maximum reverse leakage current: 5 μA

rated DC blocking voltage per leg TA=125℃ IR Maximum reverse leakage current: 100μA

Operating Temperature Range TJ Operating Junction Temperature: -55 to +150 ℃

Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃

Package: DBS

DB102S Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	30 A
Number of components	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	100 V
surface mount	YES
Terminal surface	Tin (Sn)

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