DAN202 datasheet, PDF - EEWORLD Datasheet

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DAN202: Descriptionswitching diode; CategoryDiscrete semiconductor; File Size462KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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DAN202 Overview

switching diode

Features

Product Name: Switching Diode

Product model: DAN202

product features:

High Speed

High Reliability

Suitable for High Packing Density Layout

Applications:

High Speed Switching

Product parameters:

Pd dissipated power: 250mW

Io rectified current: 100mA

VR reverse working voltage: 80V

VF forward buck: 1.2V

IR reverse current: 0.1uA

Trr Forward recovery time: 4ns

Package: SOT-23

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

DAN202

SWITCHING DIODE

SOT-23

FEATURES



High Speed



High Reliability



Suitable for High Packing Density Layout

APPLICATIONS



High Speed Switching

MARKING: N

MAXIMUM RATINGS ( T

=25

℃

unless otherwise noted )

Symbol

θJA

stg

Parameter

DC Blocking Voltage

Continuous Forward Current

Peak Forward Current

Surge Current

Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

Value

100

300

250

500

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS(T

=25

℃

unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Reverse recovery time

Symbol

(BR)

tot

=100μA

=70V

=100mA

=6V,f=1MHz

= I

=5mA, V

=6V

Test conditions

Min

0.1

1.2

3.5

Typ

Max

Unit

μA

A,Jun,2011

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