DONGGUAN NANJING ELECTRONICS LTD.,
SOT-223 Plastic-Encapsulate Transistors
SOT-223
CZT3055
FEATURES
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
High Current
Low Voltage
Complement to CZT2955
Surface Mounted Power Amplifier Application
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
60
7
6
1
125
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V
(BR)CEO
V
(BR)CER
I
CEO
I
CEV
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
f
T
Test conditions
I
C
=30mA,I
B
=0
I
C
=30mA,R
BE
=100Ω
V
CE
=30V,I
B
=0
V
CE
=100V,V
EB
=1.5V
V
EB
=7V,I
C
=0
V
CE
=4V, I
C
=4A
V
CE
=4V, I
C
=6A
I
C
=4A,I
B
=400mA
V
CE
=4V, I
C
=4A
V
CE
=10V,I
C
=500mA, f=1MHz
2.5
20
5
1.1
1.5
V
V
MHz
Min
60
70
700
1
5
70
Typ
Max
Unit
V
V
μA
mA
mA
MCU
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