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CJT04N15

Description
Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 160mΩ @ 4A, 10V Maximum power dissipation (Ta =25°C):- Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size833KB,5 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJT04N15 Overview

Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 160mΩ @ 4A, 10V Maximum power dissipation (Ta =25°C):- Type: N-channel

CJT04N15 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)150V
Continuous drain current (Id) at 25°C4A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance160mΩ @ 4A,10V
Maximum power dissipation (Ta=25°C)-
typeN channel

CJT04N15 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223
Plastic-Encapsulate MOSFETS
CJT04N15
V
(BR)DSS
150V
N-Channel Power MOSFET
R
DS(on)
MAX
 
160mΩ
@10V
I
D
4A
 
SOT-223
GENERAL DESCRIPTION
This
CJT04N15 use advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.It
can be used in a wide variety of applications.
1
1. GATE
2. DRAIN
3. SOURCE
2
3
FEATURE
High
density cell design for ultra low R
DS(ON)
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
MARKING
EQUIVALENT CIRCUIT
T04N15=
Device code
151=Code
T04N15
151
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Thermal Resistance from Junction to Ambient
Junction
Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V
DS
V
GS
I
D
I
DM
R
θJA
T
J
T
STG
T
L
Value
150
±20
4
16
125
150
-55 ~+150
260
Unit
V
A
℃/W
www.cj-elec.com
1
A-2,May,2016
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