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CJ79L12(SOT-89)

Description
Regulator, 1 Output, BIPolar,
CategoryPower/power management    The power supply circuit   
File Size421KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Parametric View All

CJ79L12(SOT-89) Overview

Regulator, 1 Output, BIPolar,

CJ79L12(SOT-89) Parametric

Parameter NameAttribute value
MakerJCET
package instruction, TO-243
Reach Compliance Codeunknown
AdjustabilityFIXED
Nominal dropback voltage 12.5 V
Maximum absolute input voltage35 V
Maximum grid adjustment rate0.25%
Maximum load regulation0.1%
Output times1
Number of terminals3
Working temperatureTJ-Max125 °C
Working temperature TJ-Min
Maximum output current 10.1 A
Nominal output voltage 1-12 V
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTO-243
Certification statusNot Qualified
surface mountYES
technologyBIPOLAR
Maximum voltage tolerance4.17%

CJ79L12(SOT-89) Preview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Encapsulate Three Terminal Voltage Regulator
SOT-89
CJ79L12
Three-terminal negative voltage regulator
FEATURES
Maximum Output current
I
OM:
0.1
Output voltage
V
o
:
-12
Continuous total dissipation
P
D
:
0. 5 W
1. GND
2. IN
3. OUT
1
2
3
A
V
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
Parameter
Input Voltage
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
l
T
OPR
T
STG
Value
-35
0~+125
-55~+150
Units
V
ELECTRICAL CHARACTERISTICS AT SPECIFIED VIRTUAL JINCTION TEMPERATURE
(Vi=19V,Io=40mA,Ci=0.33μF,Co=0.1μF, unless otherwise specified )
Parameter
Symbol
Test conditions
25℃
MIN
-11.5
-11.4
-11.4
TYP
-12
-12
-12
24
15
50
40
MAX
-12.5
-12.6
-12.6
100
50
250
200
6.5
1.5
0.1
UNIT
V
V
V
mV
mV
mV
mV
mA
mA
mA
uV
dB
V
Output voltage
Vo
-14.5V≤V
l
≤-27V,
Io=1mA~40mA
Io=1mA~70mA
0-125℃
25℃
25℃
25℃
25℃
25℃
0-125℃
0-125℃
25℃
0-125℃
25℃
Load Regulation
Line regulation
Quiescent Current
Quiescent Current Change
Output Noise Voltage
Ripple Rejection
Dropout Voltage
TYPICAL APPLICATION
ΔVo
ΔVo
Iq
ΔIq
ΔIq
V
N
RR
Vd
Vi
Io=1mA~100mA
Io=1mA~40mA
-14.5V≤V
l
≤-27V
-16V≤V
l
≤-27V
-16V≤V
l
≤-27V
1mA≤I
O
≤40mA
10Hz≤f≤100KHz
-15V≤V
l
≤-25V,f=120Hz
2
3
Vo
80
37
42
1.7
CJ79L12
1
Ci
0.33μF
C0
0.1μF
Note: Bypass capacitors are recommended for optimum stability and transient response and should be located as close as
possible to the regulators.
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