CJ431(SOT89-3) datasheet, PDF - EEWORLD Datasheet

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CJ431(SOT89-3): DescriptionAdjustable voltage stabilizing circuit; CategoryPower management; File Size478KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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CJ431(SOT89-3) Overview

Adjustable voltage stabilizing circuit

Features

Product name: Adjustable voltage regulator circuit

Product model: CJ431(SOT89-3)

product features:

The output voltage can be adjusted to 36V

Low dynamic output impedance ,its typical value is 0.2Ω

Trapping current capability is 1 to 100mA

The typical value of the equivalent temperature factor in the whole temperature scope is 50 ppm/

The effective temperature compensation in the working range of full temperature

Low output noise voltage

Fast on -state response

Product parameters:

Pd power dissipation: 500mW

Io rectified current: 100mA

Vi Input voltage: -

VIROC ：-

VO output voltage: VREF2.45~2.55V

Iq Quiescent Current: -

Package: SOT-89-3L

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L

Encapsulate Adjustable Reference Source

CJ431

Adjustable Accurate Reference Source

FEATURES

The output voltage can be adjusted to 36V

Low dynamic output impedance ,its typical value is

0.2Ω

Trapping current capability is 1 to

100mA

The typical value of the equivalent temperature factor in the

whole temperature scope is

ppm/

℃

The effective temperature compensation in the working

range of full temperature

Low output noise voltage

Fast on -state response

SOT-89-3L

1.REFERENCE

2.ANODE

3.CATHODE

ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unlessotherwise specified)

Parameter

Cathode Voltage

Cathode Current Range (Continuous)

Reference lnput Current Range

Power Dissipation

Symbol

Iref

θJA

Topr

Tstg

Value

-100-+150

0.05-+10

500

Units

Thermal Resistance from Junction to Ambient

Operating temperature

Storage temperature Range

250

0-70

-65-+150

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25

℃

unless otherwise specified)

Parameter

Reference lnput Voltage

Deviation of reference input Voltage

Over temperature (note)

Ratio Of Change in Reference lnput

Voltage to the change in Cathode

Voltage

Reference lnput Current

Deviation Of Reference lnput Current

Over Full Temperature Range

Minimum cathode current for

regulation

Off-state cathode Current

Dynamic lmpedance

Symbol

ref

△

ref

△

Test

conditions

Min

2.450

Typ

2.5

4.5

-1.0

-0.5

1.5

0.4

0.45

0.05

0.15

Max

2.550

-2.7

-2.0

1.2

1.0

0.5

nit

mV/V

μA

Ω

REF

, I

=10mA

REF

, I

=10mA

Tmin≤Ta≤Tmax

=10mA

△

=10V~V

REF

△

ref

△

ref

△

ref

△

KA(min)

KA(OFF)

△V

=36V~10V

= 10mA,R

=10KΩ

=∞

=10mA, R

=10KΩ

=∞

=full Temperature

REF

=36V ,V

REF

, l

=1 to 100mA

f≤1.0KHz

Note:T

MIN

℃

MAX

℃

CLASSIFICATION OF V

ref

Rank

Range

0.5%

2.487-2.513

2.475-2.525

2.450-2.550

B,Jan,2011

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