CJ2312 datasheet, PDF - EEWORLD Datasheet

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CJ2312: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 31.8mΩ @ 5A, 4.5V Maximum power dissipation ( Ta=25°C): 350mW Type: N-channel N-channel, 20V, 5A, 31.8mΩ@4.5V; CategoryDiscrete semiconductor MOS (field effect tube); File Size179KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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CJ2312 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 5A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 31.8mΩ @ 5A, 4.5V Maximum power dissipation ( Ta=25°C): 350mW Type: N-channel N-channel, 20V, 5A, 31.8mΩ@4.5V

CJ2312 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	20V
Continuous drain current (Id) at 25°C	5A
Gate-source threshold voltage	1V @ 250uA
Drain-source on-resistance	31.8mΩ @ 5A,4.5V
Maximum power dissipation (Ta=25°C)	350mW
type	N channel

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate MOSFETS

CJ2312

N-Channel 20-V(D-S) MOSFET

SOT-23

APPLICATIONS

DC/DC Converters

Load Switching for Portable Applications

1. GATE

2. SOURCE

3. DRAIN

MARKING:

S12

Maximum ratings (T

=25℃ unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source-Drain Diode Current

Maximum Power Dissipation

Thermal Resistance from Junction to Ambient

Junction Temperature

Storage Temperature

t=5s

Symbol

θJA

stg

Value

±8.0

1.04

0.35

357

150

-50 ~+150

℃/W

℃

Unit

B,Dec,2011

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