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CESD523LC5VB

Description
Polarity: Bidirectional Peak pulse current (10/1000us): 3.5A (8/20us) Clamping voltage: 11.5V Breakdown voltage (minimum): 5.5V Reverse shutdown voltage (typ.): 5V
CategoryDiscrete semiconductor    ESD diode   
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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CESD523LC5VB Overview

Polarity: Bidirectional Peak pulse current (10/1000us): 3.5A (8/20us) Clamping voltage: 11.5V Breakdown voltage (minimum): 5.5V Reverse shutdown voltage (typ.): 5V

CESD523LC5VB Parametric

Parameter NameAttribute value
polarityBidirectional
Peak pulse current (10/1000us)3.5A (8/20us)
clamping voltage11.5V
Breakdown voltage (minimum value)5.5V
Reverse shutdown voltage (typ)5V

CESD523LC5VB Preview

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CESD523LC5VB
CREATEK Microelectronics
ESD Protection Diode in SOD-523
Features
40Watts
peak pulse power (tp = 8/20 s)
SOD-523 package
Bidirectional
configurations
Low clamping voltage
Low leakage current
Medium capacitance (Cj=2.7pF typ.)
Protection one data/power line to:
IEC 61000-4-2 ±8kV contact ±15kV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning)
3.5A
(8/20 s)
2
1
2
1
Mechanical Data
Case:
SOD-523 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Applications
Computers and peripherals
Communication systems
Notebook
Cellular handsets and accessories
Portable electronics
Audio and video equipment
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak Pulse Power (T
P
=8/20 S)
ESD contact/air discharge (IEC-61000-4-2)
Peak Pulse Current ( t
P
= 8/20 S )
Junction Temperature
Storage temperature
Symbol
P
PP
V
ESD
I
PP
T
J
T
STG
Value
40
8/15
3.5
-55 to +125
-55 to +150
Unit
W
kV
A
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (IEC 61000-4-5)
Clamping Voltage (IEC 61000-4-2)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
C
J
Condition
I
T
=1mA
V
R
=5.0V
I
PP
=3.5A
V
ESD
=8kV
V
R
=0V, f=1MHz
Min
5.5
Typ
6.5
Max
5.0
1
11.5
Unit
V
V
uA
V
V
pF
10
2.7
Rev.
2.0
www.crea-tek.com
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