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CESD2510UC5VU-M

Description
Polarity: Unidirectional Peak pulse current (10/1000us): 3A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): 6V Reverse shutdown voltage (typ): 5V (Max)
CategoryDiscrete semiconductor    ESD diode   
File Size601KB,4 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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CESD2510UC5VU-M Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 3A (8/20us) Clamping voltage: 11V Breakdown voltage (minimum): 6V Reverse shutdown voltage (typ): 5V (Max)

CESD2510UC5VU-M Parametric

Parameter NameAttribute value
polarityUnidirectional
Peak pulse current (10/1000us)3A (8/20us)
clamping voltage11V
Breakdown voltage (minimum value)6V
Reverse shutdown voltage (typ)5V (Max)

CESD2510UC5VU-M Preview

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CESD2510UC5VU-M
CREATEK Microelectronics
Ultra
Low Capacitance ESD TVS Array in
DFN2510
Features
30Watts
peak pulse power (tp = 8/20μs)
DFN2510
Package
Unidirectional configurations
Solid-state silicon-avalanche technology
Low clamping voltage
Low leakage current
Low capacitance (0.15pF typical I/O to I/O)
ESD Protection for high-speed data lines to:
IEC 61000-4-2 ±15KV contact ±15KV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning)
3A
(8/20μs)
1
2
Mechanical Data
Applications
USB 3.0, USB 2.0, MHL
HDMI 2.0, Display Port 1.3, eSATA
Unified Display Interface (UDI)
Digital Visual Interface (DVI)
High speed serial interfaces
Case:
DFN2510
(plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak Pulse Power (T
P
=8/20μS)
ESD contact/air discharge (IEC-61000-4-2)
Peak Pulse Current ( t
P
= 8/20μS )
Junction Temperature
Storage temperature
Symbol
P
PP
V
ESD
I
PP
T
J
T
STG
Value
30
15/15
3.0
-55 to +125
-55 to +150
Unit
W
kV
A
Electrical Characteristics
(T
A
= 25 °C unless otherwise specified)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(SURGE)
Trigger Voltage(ESD)
Clamping Voltage(ESD)
Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
V
T
V
C
C
J
C
J
Condition
I
T
=1mA
V
R
=5V
I
PP
=3A,T
P
=8/20μS
V
ESD
= +8kV
V
ESD
= +8kV
V
R
=0V,f=1MHz, I/O to I/O
V
R
=0V,f=1MHz, I/O to GND
Min
6
Typ
7.2
0.02
10
135
20
0.15
0.35
Max
5
9.5
0.5
11
Unit
V
V
μA
V
V
V
pF
pF
Rev.
1.0,
23-May-2012
www.crea-tek.com
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