BZX84C47 datasheet, PDF - EEWORLD Datasheet

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BZX84C47: Description47 V, 0.33 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE; Categorysemiconductor Discrete semiconductor; File Size64KB，3 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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47 V, 0.33 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diode

BZX84C2V4 - BZX84C51

SOT-23

Dim

Min

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

Features

Planar Die Construction

350mW Power Dissipation

Zener Voltages from 2.4V - 51V

Ideally Suited for Automated Assembly

Processes

TOP VIEW

All Dimensions in mm

Maximum Ratings

Forward Voltage

Power Dissipation (Note 1)

@ T

= 25°C unless otherwise specified

Symbol

@ I

= 10mA

qJA

STG

Value

0.9

350

357

-65 to +150

Unit

K/W

°C

Characteristic

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

Notes:

1. Valid provided that device terminals are kept at ambient temperature.

2. Tested with pulses, 300ms pulse width, period = 5ms.

3. f = 1KHz.

DS18001 Rev. P-2

1 of 3

BZX84C2V4 - BZX84C51

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