EEWORLDEEWORLDEEWORLD

Part Number

Search

BZX84C39W

Description
39 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size155KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BZX84C39W Overview

39 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

BZX84C39W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance130 Ω
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage39 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1

BZX84C39W Preview

Download Datasheet
BZX84C2V4W SERIES
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE
2.4 to 75 Volts
POWER
200 mWatts
SOT-323
Unit: inch (mm)
FEATURES
.087(2.2)
.078(2.0)
.006(.15)
.002(.05)
• 200mW Power Dissipation
• Ideally Suited for Automated Assembly Processes
In compliance with EU RoHS 2002/95/EC directives
.087(2.2)
.070(1.8)
.054(1.35)
.045(1.15)
.056(1.40)
.047(1.20)
MECHANICAL DA
TA
• Case: SOT-323, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.0048 grams
• Mounting Position: Any
.004(.10)MAX.
.016(.40)
.008(.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Parameter
Power Dissipation @ T
A
= 25
O
C(Note A)
Operating Junction and StorageTemperature Range
Symbol
P
D
T
J
Value
200
-55 to +150
Units
.044(1.1)
.035(0.9)
.004(.10)MIN.
• Planar Die construction
mW
O
C
NOTE :
A. Mounted on 5.0mm
2
(.013mm thick) land areas.
REV.0.1-OCT.5.2009
PAGE . 1
This Wednesday's award-winning live broadcast: 5G conformance testing and device acceptance testing
Live broadcast time: Wednesday, September 11, 2019, 15:00-17:00 Live Topic: 5G Conformance Test and Equipment Acceptance Test Live broadcast content: As 5G New Radio (NR) moves toward large-scale comm...
EEWORLD社区 Test/Measurement
High-speed circuit design and simulation analysis: Cadence example design details
Circuit design, especially modern high-speed circuit system design, is a job that changes with each passing day as electronic technology develops. It is very interesting and challenging. The purpose o...
arui1999 Download Centre
I would like to ask a question about ultrasonic binary gas concentration measurement?
Has anyone in the forum done research on ultrasonic binary gas concentration measurement? For example, measuring oxygen concentration in air-oxygen mixed gas. I see such sensors on the Internet, but m...
qzc飘曳 Sensor
Is it "reasonable..." to fly a kite made of your own photo?
Original post link: http://mc.dfrobot.com.cn/thread-275083-1-1.html http://mc.dfrobot.com.cn/thread-275083-1-1.html Not long ago, I found a Japanese guy named ARuFa who lives in people's hearts. Out o...
kikiwu DIY/Open Source Hardware
Why is the application of gallium nitride in RF electronics still so popular?
最近,QORVO又推了一篇氮化镓在射频电子中的应用,在这篇中指出,GaN 非常适合提供毫米波领域所需的高频率和宽带宽。它可以满足性能和小尺寸要求,如下图所示。使用毫米波频段的应用需要高度定向的波束形成技术(波束形成将无线电信号聚焦成强指向性的波束,从而提高功率并最大限度地减少用户设备上的干扰)。这意味着 RF 子系统将需要大量有源元件来驱动相对紧凑的孔径。GaN 非常适合这些应用,因为以小封装尺寸...
alan000345 RF/Wirelessly
When the MOS is turned on like 2301, is the VDS voltage 0? That is, there is no loss? The simulation shows that there is no loss.
When the MOS is turned on like 2301, is the VDS voltage 0? That is, there is no loss? The simulation shows that there is no loss....
QWE4562009 Integrated technical exchanges

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号