BZX84C12 datasheet, PDF - EEWORLD Datasheet

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BZX84C12: DescriptionAccuracy: - Regulated voltage value (typ.): 12V Reverse leakage current: 100nA @ 8V Maximum power: 300mW; CategoryDiscrete semiconductor Zener diode; File Size901KB，5 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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BZX84C12 Overview

Accuracy: - Regulated voltage value (typ.): 12V Reverse leakage current: 100nA @ 8V Maximum power: 300mW

BZX84C12 Parametric

Parameter Name	Attribute value
Accuracy	-
Stable voltage value (typical value)	12V
Reverse leakage current	100nA @ 8V
Maximum power	300mW

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate D

BZX84C2V4-BZX84C43

ZENER DIODE

SOT-23

FEATURES

Planar Die Construction

300mW Power Dissipation

Zener Voltages from 2.4V -

43V

Ultra-Small Surface Mount Package Power

Dissipation

Maximum Ratings(T

=25℃ unless otherwise specified)

Characteristic

Forward Voltage (Note 2)

Power Dissipation(Note 1)

Junction Temperature

Storage Temperature Range

@ I

= 10mA

Symbol

θJA

stg

Value

0.9

300

417

150

-55~+150

Unit

℃

Thermal Resistance

from

Junction to Ambient

ZZZFMHOHFFRP

D$uJ

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