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BZT52B3V0S

Description
BZT52B3V0S Zener diode
CategoryDiscrete semiconductor   
File Size364KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BZT52B3V0S Overview

BZT52B3V0S Zener diode

Features

Product Name: Zener Diode


Product model: BZT52B3V0S


product features:


Planar Die Construction


500mW Power Dissipation on Ceramic PCB


General Purpose, Medium Current


Ideally Suited for Automated Assembly Processes


Available in Lead Free Version

Parameters

Pd power dissipation: 200mW


Vz stable voltage: Nom=3.0V Min=2.94V Max=3.06V


Zzt breakdown impedance: 95Ω


Zzk breakdown impedance: 600Ω


IR reverse current: 10uA


Vf forward voltage drop: 0.9V


Package: SOD-323

BZT52B3V0S Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BZT52B2V4S-BZT52B39S
ZENER DIODE
FEATURES
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly Processes
Available in Lead Free Version
SOD-323
Maximum Ratings(Ta=25℃ unless otherwise specified)
Characteristic
Forward Voltage (Note 2)
Power Dissipation(Note 1)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
@ IF = 10mA
Symbol
V
F
P
d
R
θJA
T
j
,T
STG
Value
0.9
200
625
-65 to +150
Unit
V
mW
℃/W
/
Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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