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BZT52-B30_R1_00001

Description
Maximum power: 410mW Accuracy: - Reverse leakage current: 0.1uA @ 22.5V Regulated voltage value (typical value): 30V
CategoryDiscrete semiconductor    Zener diode   
File Size265KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BZT52-B30_R1_00001 Overview

Maximum power: 410mW Accuracy: - Reverse leakage current: 0.1uA @ 22.5V Regulated voltage value (typical value): 30V

BZT52-B30_R1_00001 Parametric

Parameter NameAttribute value
Maximum power410mW
Accuracy-
Reverse leakage current0.1uA @ 22.5V
Stable voltage value (typical value)30V

BZT52-B30_R1_00001 Preview

Download Datasheet
BZT52-B2V4~BZT52-B75
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE
2.4 to 75 Volt
POWER
410 mWatt
0.154(3.90)
0.141(3.60)
0.110(2.80)
0.098(2.50)
FEATURES
• Planar Die construction
• 410mW Power Dissipation
• Zener Voltages from 2.4~75V
• Ideally Suited for Automated Assembly Processes
• Lead free in
compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU
directive)
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.028(0.70)
0.019(0.50)
0.071(1.80)
0.055(1.40)
MECHANICAL DATA
• Case: SOD-123, Molded Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Polarity: See Diagram Below
• Approx. Weight: 0.0004 ounces, 0.01 grams
0.005(0.12)MAX.
0.008(0.20)MAX.
0.053(1.35)
0.037(0.95)
0.016(0.40)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
o
Parameter
Maximum Power Dissipation (Note 1)
Forward Voltage Drop at I
F
=10mA
Junction to Ambient (Note 2)
Thermal Resistance
Junction to Lead
Operating Junction Temperature and StorageTemperature Range
Symbol
Value
410
0.9
430
Units
mW
V
P
D
V
F
R
θJA
R
θJL
T
J
O
C/W
320
-55 to +150
O
C
1
Cathode
2
Anode
NOTES:
1. Mounted on 48 cm
2
FR-4 PCB .
2. Mounted on a FR-4 PCB, with minimum recommended Pad
May 2,2017-REV.07
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