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BY396_04

Description
3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size31KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

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DATA SHEET
BY396 thru BY399
SOFT RECOVERY, FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE
FEATURES
• High current capability.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Void-free molded plastic package
• Exceeds environmental standards of MIL-S-19500/228
• Fast switching for high efficiency.
.375(9.5)
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
3.0 Amperes
DO-201AD
Unit: inch(mm)
.052(1.3)
.048(1.2)
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICALDATA
Case: Molded plastic, DO-201AD
Terminals: Axial leads, solderable to MIL-STD-202,Method 208
Polarity: Color Band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 gram
1.0(25.4)MIN.
.285(7.2)
• Both normal and Pb free product are available :
.210(5.3)
.188(4.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d
l e a d l e ng t h a t T
A
= 5 0
O
C
C ur r e nt . 3 7 5 " ( 9 . 5 m m )
S YM B OL
V
RRM
V
RM S
V
DC
I
AV
I
F S M
I
F RM
V
F
I
R
T
RR
C
J
Rθ J A
T
J
T
S TG
B Y3 9 6
100
70
100
B Y3 9 7
200
140
200
3 .0
100
10
1 .3
10
500
150
60
22
- 5 5 TO + 1 2 5
- 5 5 TO + 1 5 0
O
B Y3 9 8
400
280
400
B Y3 9 9
800
560
800
U N IT S
V
V
V
A
A
A
V
uA
ns
pF
C / W
O
P e a k F o r w a r d S ur g e C ur r e nt : 1 0 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um R e p e t i t i ve P e a k F o r w a r d S ur g e ( N o t e 1 )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
A
= 2 5
O
C
R a t e d D C B l o c k i ng Vo l t a g e T
A
= 1 0 0
O
C
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 2 )
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 3 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 4 )
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
C
C
O
NOTES: 1. Repetitive Peak Forward Surge Current at f<15KHz.
2. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A.
3. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
4. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted.
STAD-AUG.25.2004
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