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BY251

Description
3.0A SILICON RECTIFIERS 3.0A silicon rectifier
CategoryDiscrete semiconductor    diode   
File Size687KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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BY251 Overview

3.0A SILICON RECTIFIERS 3.0A silicon rectifier

Features

Product Name: 3.0A SILICON RECTIFIERS 3.0 ampere silicon rectifier


Product model: BY251


product features:


Low forward voltage drop


High current capability


High reliability


High surge current capability



Mechanical data:


Cases:Molded plastic



Epoxy:UL 94V-0 rate flame retardant



Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed



Polarity:Color band denotes cathode end



High temperature soldering guaranteed;


250?C /10 seconds/.375”,(9.5mm)lead


Lengths at 5 lbs.,(2.3kg) tension



Weight: 1.2 grams



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 200V



Maximum RMS Voltage VRMS Voltage effective value: 140 V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 200V



Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=75℃ IF(AV) Maximum forward current: 3.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 150 A



Maximum Instantaneous Forward Voltage @ 3.0A VF Maximum forward voltage drop: 1.0 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA


DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 100 mA



Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 18 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -65 to +125 ℃



Storage Temperature Range TSTG Storage Temperature Range: -65 to +150 ℃



Package: DO-201AD


BY251 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current150 A
Number of components1
Maximum operating temperature125 °C
Maximum output current3 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
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