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BSS138T/R7

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BSS138T/R7 Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

BSS138T/R7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)0.3 A
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSS138T/R7 Preview

Download Datasheet
BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@2.5V,I
DS
@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.120(3.04)
0.110(2.80)
SOT-23
Unit
inch(mm)
0.006(0.15)MIN.
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
0.004(0.10)MAX.
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
50
+20
300
2000
350
210
- 5 5 to + 1 5 0
357
Uni ts
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Ra ng e
M a xi m um P o we r D i s s i p a ti o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 26,2010-REV.00
PAGE . 1
0.086(2.20)
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