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BSS123

Description
Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 170mA Gate-source threshold voltage: 2V @ 1mA Drain-source on-resistance: 6Ω @ 170mA, 10V Maximum power dissipation (Ta= 25°C): 360mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size770KB,6 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
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BSS123 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 170mA Gate-source threshold voltage: 2V @ 1mA Drain-source on-resistance: 6Ω @ 170mA, 10V Maximum power dissipation (Ta= 25°C): 360mW Type: N-channel

BSS123 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)100V
Continuous drain current (Id) at 25°C170mA
Gate-source threshold voltage2V @ 1mA
Drain-source on-resistance6Ω @ 170mA,10V
Maximum power dissipation (Ta=25°C)360mW
typeN channel

BSS123 Preview

Download Datasheet
BSS123
Rev.F Apr.-2017
描述
/
Descriptions
DATA SHEET
SOT-23
塑封封装
N
沟道
MOS
场效应管。N-CHANNEL
MOSFET in a SOT-23 Plastic Package.
特征
/ Features
极½的 R
DS(ON)
为高密度电池设计。
High density cell design for extremely low R
DS(ON)
.
用途
/
Applications
适用于½负½½开关或脉½调制应用。
This device is suitable for use as a load switch or in PWM applications.
内部等效电路
/ Equivalent Circuit
引脚排列
3
/
Pinning
1
2
PIN1:G
印章代码
Marking
PIN 2:S
/ Marking
HSA
PIN 3:D
http://www.fsbrec.com
1
/
6
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