BRF10N65 datasheet, PDF - EEWORLD Datasheet

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BRF10N65: DescriptionDrain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 9.5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 850mΩ @ 4.75A, 10V Maximum power Dissipation (Ta=25°C): 50W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1016KB，6 Pages; ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.; Websitehttp://www.fsbrec.com/; Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of 45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.

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BRF10N65 Overview

Drain-source voltage (Vdss): 650V Continuous drain current (Id) (at 25°C): 9.5A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 850mΩ @ 4.75A, 10V Maximum power Dissipation (Ta=25°C): 50W(Tc) Type: N-channel

BRF10N65 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	650V
Continuous drain current (Id) at 25°C	9.5A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	850mΩ @ 4.75A,10V
Maximum power dissipation (Ta=25°C)	50W(Tc)
type	N channel

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BRFL10N65

Rev.F Dec.-2017

DATA SHEET

描述

Descriptions

TO-220FL

塑封封装

沟道

MOS

场效应管。N-CHANNEL

MOSFET in a TO-220FL Plastic Package.

特征

/ Features

½栅电荷,½反馈电容,开关速度快。

Low gate charge, low crss, fast switching.

用途

Applications

用于高功率 DC/DC ½换和功率开关。

These devices are well suited for high efficiency switching DC/DC converters .

内部等效电路

/ Equivalent Circuit

引脚排列

/ Pinning

PIN1：G

放大及印章代码

PIN 2：D

PIN 3：S

/ h

Classifications & Marking

见印章说明。See

Marking Instructions.

http://www.fsbrec.com

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