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BR210F_00001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BR210F_00001 Overview

Rectifier Diode

BR210F_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

BR210F_00001 Preview

Download Datasheet
BR28F SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
80-150Volts
CURRENT
2 Amperes
MECHANICAL DATA
• Case: SMAF molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0012 ounces, 0.0328 grams
• Polarity : Color band denotes cathode end
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
PAR AME T E R
Re curre nt P e a k Re ve rs e Vo lta g e
RM S Vo lta g e
D C B lo c ki ng Vo lta g e
A ve ra g e F o rwa rd C ur re nt
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf si ne -wa ve
s up e ri mp o se d o n r a te d lo a d (JE D E C me tho d )
F o rwa r d Vo lta g e a t 2 .0 A
D C Re ve rse C urre nt a t Ra te d D C B lo ck i ng Vo lta g e
Typ i c a l Junc ti o n C a p a ci ta nc e ( V R= 4 V, f=1 M Hz)
Typ i c a l The rm a l Re s i s ta nc e ,J uncti o n to L e a d (No te 1 )
J uncti o n to A m b i e nt (No te 1 )
Op e ra ti ng Junc ti o n Te m p e r a ture a nd S to ra g e Te mp e ra tur e Ra ng e
NOTES :
1. Mounted on 48c m
2
S YMB OL
V
R RM
V
RMS
V
R
I
F (AV )
I
F S M
V
F
I
R
C
J
R
JL
R
JA
T
J
,T
S T G
BR 28F
80
56
80
B R2 9F
90
63
90
2
B R2 10F
1 00
70
1 00
B R2 15F
1 50
1 05
1 50
U N IT S
V
V
V
A
A
50
0 .8
0 .0 5
75
20
83
-6 5 to +1 5 0
60
O
0 .9
V
mA
pF
C / W
O
C
FR-4 P CB .
March 13,2012-REV.00
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