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BD840YT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

BD840YT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: BD840YT


parameter:


Repetitive reverse voltage peak Vrrm: 40V


Maximum average rectified current Io: 8A


Maximum forward surge current I FSM: 85A


Forward voltage drop VF: 0.7V when IF=8A


Maximum feedback current IR: 50uA when VR=40V


Package: TO-251AB/DPAK


BD840YT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-251AB
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Is SamacsysN
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JEDEC-95 codeTO-251AB
JESD-30 codeR-PSIP-T3
Maximum non-repetitive peak forward current85 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage40 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

BD840YT Preview

Download Datasheet
BD840YT~BD8200YT
THROUGH HOLE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• High surge capacity
• In compliance with EU RoHS 2002/95/EC directives
.307(7.8)
.283(7.2)
.225(5.7)
.209(5.3)
.264(6.7)
.248(6.3)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
40 to 200 Volts
CURRENT
8 Ampere
TO-251AB
Unit : inch (mm)
• Low power loss, High efficiency
.063(1.6)
.047(1.2)
.216(5.5)
.200(5.1)
MECHANICALDATA
• Case: TO-251AB molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Standard packaging: 16mm tape (EIA-481)
• Weight: 0.0104 ounces, 0.297grams.
.032(0.8)
.012(0.3)
.09 .09
(2.3) (2.3)
.071(1.8)
.051(1.3)
.02(0.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current ( S e e F i g u r e 1 )
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 8.0A
Maximum DC Reverse Current T
J
=25
O
C
at Rated DC Blocking Voltage T
J
=100
O
C
Typical Thermal Resistance
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
, T
S T G
B D 8 4 0 YT
B D 8 4 5 YT
B D 8 5 0 YT
B D 8 6 0 YT
B D 8 8 0 YT
B D 8 9 0 YT
B D 8 1 0 0 YT B D 8 1 5 0 YT B D 8 2 0 0 YT
UNITS
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
8
85
90
63
90
100
70
100
150
105
150
200
140
200
0.70
0.75
0.05
20
5
0.80
0.90
V
mA
O
C/W
O
-5 5 to +1 5 0
-65 to +175
C
STAD-APR.30.2009
PAGE . 1
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