BD645CS_10001 datasheet, PDF - EEWORLD Datasheet

BD645CS_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 45V V(RRM), Silicon, TO-252, DPAK-3/2; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BD645CS_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 45V V(RRM), Silicon, TO-252, DPAK-3/2

Parameter Name	Attribute value
Maker	PANJIT
package instruction	R-PSSO-G2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.7 V
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Maximum non-repetitive peak forward current	75 A
Number of components	2
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	45 V
Maximum reverse current	50 µA
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	SINGLE

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