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BD3100S

Description
Schottky diodes
CategoryDiscrete semiconductor   
File Size98KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BD3100S Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: BD3100S


parameter:


Repetitive reverse voltage peak Vrrm: 100V


Maximum average rectified current Io: 3A


Maximum forward surge current I FSM: 75A


Forward voltage drop VF: 0.8V when IF=3A


Maximum feedback current IR: 50uA when VR=100V


Package: TO-252/DPAK


BD3100S Preview

Download Datasheet
BD340S~BD3200S
THROUGH HOLE SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• In compliance with EU RoHS 2002/95/EC directives
40 to 200 Volts
CURRENT
3.0 Ampere
MECHANICAL DATA
• Case: TO-252 molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Polarity: As marking
• Weight: 0.0104 ounces, 0.297 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA ME TE R
Maxi mum Recurrent P eak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage Forward C urrent ( S e e F i g u r e 1 )
P eak Forward S urge C urrent :8.3ms si ngle half si ne-wave
superi mposed on rated load(JE D E C method)
Maxi mum Forward Voltage at 3.0A ( Note 1)
Maxi mum D C Reverse C urrent T
J
=25
O
C
at Rated D C B locki ng Voltage T
J
=100
O
C
Typi cal Thermal Resi stance ( Note 2)
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
S YMB OL
V
R R M
V
R M S
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
JL
R
θ
JA
T
J
, T
S T G
B D 340S
B D 345S
B D 350S
B D 360S
B D 380S
B D 390S
B D 3100S
B D 3150S
B D 3200S
UNITS
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
3.0
75
90
63
90
100
70
100
150
105
150
200
140
200
0.70
0.74
0.05
20
20
75
0.80
0.90
V
mA
O
C/W
O
-55 to +150
-65 to +175
C
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8.0mm
2
(.013mm thick) copper pad areas.
STAD-APR.28.2009
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