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BC859CWT/R13

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size86KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance  

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC859CWT/R13 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC859CWT/R13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

BC859CWT/R13 Preview

Download Datasheet
BC856AW ~ BC859CW
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
0.087(2.20)
0.078(2.00)
30/45/65 Volts
CURRENT
200 mWatts
• PNP epitaxial silicon, planar design
• Collector current I
C
= 100mA
• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
BC849W Series
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
0.016(0.40)
0.008(0.20)
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
Device Marking:
BC856AW=56A
BC856BW=56B
BC857AW=57A
BC857BW=57B
BC857CW=57C
BC858AW=58A
BC858BW=58B
BC858CW=58C
BC859BW=59B
BC859CW=59C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
BC856W
BC857W
BC858W, BC859W
BC856W
BC857W
BC858W, BC859W
BC856W
BC857W
BC858W, BC859W
Symbol
V
CEO
Value
-65
-45
-30
-80
-50
-30
6.0
6.0
-5.0
-100
200
-55 to 150
-55 to 150
Units
V
0.004(0.10)MIN.
• General purpose amplifier applications
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Storage Temperature Range
Junction Temperature Range
V
EBO
I
C
P
TOT
T
STG
T
J
V
mA
mW
O
C
C
O
December 17,2010-REV.00
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