BC858BW datasheet, PDF - EEWORLD Datasheet

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BC858BW: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size86KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC858BW Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC858BW Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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BC856AW ~ BC859CW

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE

FEATURES

0.087(2.20)

0.078(2.00)

30/45/65 Volts

CURRENT

200 mWatts

• PNP epitaxial silicon, planar design

• Collector current I

= 100mA

• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/

BC849W Series

• In compliance with EU RoHS 2002/95/EC directives

0.087(2.20)

0.070(1.80)

0.054(1.35)

0.045(1.15)

0.056(1.40)

0.047(1.20)

0.006(0.15)

0.002(0.05)

MECHANICAL DATA

• Case: SOT-323, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0001 ounce, 0.005 gram

0.016(0.40)

0.008(0.20)

0.004(0.10)MAX.

0.044(1.10)

0.035(0.90)

Device Marking:

BC856AW=56A

BC856BW=56B

BC857AW=57A

BC857BW=57B

BC857CW=57C

BC858AW=58A

BC858BW=58B

BC858CW=58C

BC859BW=59B

BC859CW=59C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector - Emitter Voltage

BC856W

BC857W

BC858W, BC859W

BC856W

BC857W

BC858W, BC859W

BC856W

BC857W

BC858W, BC859W

Symbol

CEO

Value

-65

-45

-30

-80

-50

-30

6.0

-5.0

-100

200

-55 to 150

Units

0.004(0.10)MIN.

• General purpose amplifier applications

Collector - Base Voltage

CBO

Emitter - Base Voltage

Collector Current - Continuous

Max Power Dissipation (Note 1)

Storage Temperature Range

Junction Temperature Range

EBO

TOT

STG

December 17,2010-REV.00

PAGE . 1

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