BC846,BC847,BC848,BC849,BC850 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
•
0.056(1.40)
0.120(3.04)
0.110(2.80)
30/45/65 Volts
CURRENT
330 mWatts
SOT-23
Unit
：
inch(mm)
0.006(0.15)MIN.
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Device Marking:
BC846A=46A
BC846B=46B
BC847A=47A
BC847B=47B
BC847C=47C
BC848A=48A
BC848B=48B
BC848C=48C
BC849B=49B
BC849C=49C
BC850B=50B
BC850C=50C
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)MAX.
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
BC846
BC847,BC850
BC848,BC849
BC846
BC847,BC850
BC848,BC849
BC846
BC847,BC850
BC848,BC849
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
V
EBO
I
C
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Operating Junction Temperature and Storage Temperature Range
Symbol
P
TOT
Rθ
JA
T
J
,T
STG
Value
330
375
-55 to 150
Units
mW
O
C/W
O
C
Note 1: Transistor mounted on FR-4 board 8 cm .
July 15,2011-REV.04
PAGE . 1
2
0.086(2.20)
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS
PA RA ME TE R
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
B C 8 4 6 A /B
B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
B C 8 4 6 A /B
B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
B C 8 4 6 A /B
B C 8 4 7 A /B /C ,B C 8 5 0 B /C
B C 8 4 8 A /B /C ,B C 8 4 9 B /C
S ymb o l
V
(B R)
C E O
Te s t C o nd i ti o n
IC =1 0 mA , IB =0
MIN.
65
45
30
80
50
30
6 .0
6 .0
5 .0
-
-
TYP.
-
MA X .
-
Uni ts
V
C o lle c to r - B a s e B re a k d o wn Vo lta g e
V
(B R)
C B O
IC =1 0 uA , IE =0
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
V
(B R)
E B O
IE = 1 0 uA , IC = 0
-
-
V
E mi tte r-B a s e C uto ff C urre nt
C o lle c to r-B a s e C uto ff C urre nt
D C C urre nt Ga i n
B C 8 4 6 ~B C 8 4 8 S uffi x " A "
B C 8 4 6 ~B C 8 5 0 S uffi x " B "
B C 8 4 7 ~B C 8 5 0 S uffi x " C "
B C 8 4 6 ~B C 8 4 8 S uffi x " A "
B C 8 4 6 ~B C 8 5 0 S uffi x " B "
B C 8 4 7 ~B C 8 5 0 S uffi x " C "
I
E B O
I
C B O
V E B =5
V C B =3 0 V, IE =0
V C B =3 0 V, IE =0 ,T
J
=1 5 0
O
C
IC =1 0 uA , V C E = 5 V
-
-
90
150
270
180
290
520
-
0 .7
0 .9
0 .6 6
-
-
100
15
5 .0
-
220
450
800
0 .2 5
0 .6
-
0 .7 0
0 .7 7
4 .5
nA
nA
uA
-
h
F E
-
11 0
200
420
-
-
0 .5 8
-
-
D C C urre nt Ga i n
h
F E
V
C E (S AT)
V
C E (S AT)
V
C E (S AT)
C
CBO
IC = 2 .0 mA , V C E = 5 V
IC = 1 0 mA , IB = 0 .5 mA
IC =1 0 0 mA , IB = 5 .0 mA
IC = 1 0 mA , IB = 0 .5 mA
IC =1 0 0 mA , IB = 5 .0 mA
IC =2 mA , V C E = 5 .0 V
IC =1 0 mA , V C E = 5 .0 V
V C B = 1 0 V, IE =0 , f= 1 MH
-
C o lle c to r - E mi tte r S a tura ti o n Vo lta g e
B a s e - E mi tte r S a tura ti o n Vo lta g e
B a s e - E mi tte r Vo lta g e
C o lle c to r - B a s e C a p a c i ta nc e
V
V
V
pF
NPN
July 15,2011-REV.04
PAGE . 2
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICA5L CHARACTERISTICS CURVE (BC846B,BC847B,BC848B,BC849B,BC850B)
100
V
CB
=30V
10
hF
E
500
450
400
350
300
250
200
150
100
50
T
J
=25 °C
T
J
=100° C
T
J
=150° C
V
CE
=5V
I
CB0
, Collector Current (nA)
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0
0.01
0.1
1
10
100
1000
Collector Current, IC (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
800
V
BE(ON)
(mV)
,
600
400
200
0
0.01
V
CE
=5V
T
J
= 25 °C
V
CE(sat)
(mV)
,
1000
Fig. 2. Typical h
FE
vs. Collector Current
T
J
= 100 °C
T
J
= 100 °C
100
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
I
C
/I
B
=20
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
C
ib (EB)
1000
T
J
= 25 °C
800
T
J
= 100 °C
T
J
= 25 °C
600
Capacitance, C (pF
)
V
BE(sat)
(mV)
,
C
ob (CB)
400
I
C
/I
B
=20
200
T
J
= 150 °C
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage (V)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
July 15,2011-REV.04
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 4
BC846,BC847,BC848,BC849,BC850 SERIES
ELECTRICAL CHARACTERISTICS CURVE (BC847C,BC848C,BC849C,BC850C)
100
V
CB
=30V
10
hF
E
1200
1000
800
T
J
=150° C
V
CE
=5V
I
CB0
, Collector Current (nA)
T
J
=100° C
T
J
=25 C
600
400
200
0
0.01
1
0
25
50
75
100
125
150
Junction Temperature, T
J
(
O
C)
0.1
1
10
100
1000
Collector Current, IC, (mA)
Fig. 1. Typical I
CB0
vs. Junction Temperature
1200
1000
800
T
J
= 25 °C
V
CE(sat)
(mV)
,
100
1000
Fig. 2. Typical h
FE
vs. Collector Current
V
BE(ON)
(mV)
,
T
J
= 100 °C
T
J
= 100 °C
T
J
= 150 °C
600
400
T
J
= 25 °C
200
0
0.01
T
J
= 150 °C
V
CE
=5V
I
C
/I
B
=20
0.1
1
10
100
1000
10
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 3. Typical V
BE(ON)
vs. Collector Current
1200
1000
800
T
J
= 100 °C
Fig. 4. Typical V
CE(SAT)
vs. Collector Current
10
600
400
200
0
0.01
I
C
/I
B
=20
T
J
= 150 °C
0.1
1
10
100
Capacitance, C (pF
)
T
J
= 25 °C
C
ib (EB)
T
J
= 25 °C
V
BE(sat)
(mV)
,
C
ob (CB)
1
0.1
1
10
100
Reverse Voltage (V)
Collector Current, I
C
(mA)
Fig. 5. Typical V
BE(SAT)
vs. Collector Current
July 15,2011-REV.04
Fig. 6. Typical Capacitances vs. Reverse Voltage
PAGE . 5
Domestic Chip Exchange
京公网安备 11010802033920号
EEWORLD
