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BC847BW_R1_00001

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BC847BW_R1_00001 Overview

Small Signal Bipolar Transistor,

BC847BW_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
Number of components1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

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BC846AW ~ BC850CW
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
• NPN epitaxial silicon, planar design
• Collector current IC = 100mA
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. .
(Halogen Free)
30/45/65 Volts
POWER
250 mWatts
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
Device Marking:
BC846AW=46A
BC846BW=46B
BC847AW=47A
BC847BW=47B
BC848AW=48A
BC848BW=48B
BC849BW=49B
BC850BW=50B
BC847CW=47C BC848CW=48C
BC849CW=49C BC850CW=50C
ABSOLUTE RATINGS
Parameter
Collector - Emitter Voltage
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
BC846W
BC847W, BC850W
BC848W, BC849W
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Units
V
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
V
EBO
V
Collector Current - Continuous
I
C
mA
THERMAL CHARACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
JA
R
JC
T
J
T
STG
Value
250
500
100
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
April 23,2013-REV.02
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