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BC546

Description
NPN SILICON RF SMALL SIGNAL TRANSISTOR
File Size150KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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NPN SILICON RF SMALL SIGNAL TRANSISTOR

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BC546,BC547,BC548 SERIES
NPN GENERAL PURPOSE TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector current I
C
= 100mA
• Complimentary (PNP) device:BC556,BC557,BC558 Series
• Pb free product :99% Sn above can meet RoHS
environment substance directive request
30V/45V/65V
POWER
625 mWatts
MECHANICAL DATA
• Case: TO-92
• Terminals: Solderable per MIL-STD-202, Method 208
• Approx Weight : 0.02grams
• Device Marking :
BC546A=546A
BC547A=547A
BC548A=548A
BC546B=546B
BC547B=547B
BC548B=548B
-
BC547C=547C
BC548C=548C
ABSOLUTE MAXIMUM RATINGS
PA RA ME TE R
C ollector - E mi tter Voltage
B C 546
B C 547
B C 548
B C 546
B C 547
B C 548
B C 546
B C 547
B C 548
S ymbol
V
C E O
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
625
-55 to 150
-55 to 150
Uni ts
V
C ollector - B ase Voltage
V
C B O
V
E mi tter - B ase Voltage
C ollector C urrent - C onti nuous
Max P ower D i ssi pati on
S torage T mperature
e
Juncti on T mperature
e
V
E B O
I
V
mA
mW
O
C
P
TOT
T
STG
T
J
C
C
O
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resi stance, Juncti on to Ambi ent
Symbol
R
θ
JA
Value
200
Uni ts
O
C /W
STAD-DEC.02.2005
PAGE . 1
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