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BAW56T

Description
switching diode
CategoryDiscrete semiconductor   
File Size284KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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BAW56T Overview

switching diode

Features

Product Name: Switching Diode


Product model:BAW56T


product features:


Fast Switching Speed


For General Purpose Switching Applications


High Conductance




Product parameters:


Pd dissipated power: 150mW


Io rectified current:


VR reverse working voltage: 85V


VF forward buck: 1.25V


IR reverse current: 2uA


Trr Forward recovery time:



Package: SOT-523

BAW56T Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Diodes
BAW56T/BAV70T/BAV99T
SOT-523
SWITCHING DIODE
FEATURES
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @Ta=25℃
Parameter
Reverse voltage
Forward current
Forward power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
O
P
D
T
j
T
stg
Limit
85
75
150
150
-55~+150
Unit
V
mA
mW
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Symbol
V
(BR)
I
R1
Reverse voltage leakage current
I
R2
V
R
=25V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0
f=1MHz
0.03
715
855
1000
1250
1.5
4
μA
I
R
= 1μA
V
R
=75V
Test
conditions
Min
85
2
Max
Unit
V
μA
Forward voltage
V
F
mV
Diode capacitance
Reverse recovery time
C
D
t
rr
pF
ns
I
F
=I
R
=10mA
I
rr
=0.1×I
R,
R
L
=100Ω
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