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BAV99S-R2-10001

Description
Rectifier Diode, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAV99S-R2-10001 Overview

Rectifier Diode, 100V V(RRM),

BAV99S-R2-10001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.715 V
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage100 V
Maximum reverse current2.5 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage75 V
surface mountYES

BAV99S-R2-10001 Preview

Download Datasheet
BAS16TW/BAW56DW/BAV70DW/BAV99S
SURFACE MOUNT SWITCHING DIODES
VOLTAGE
FEATURES
• Fast switching speed.
• Surface mount package Ideally Suited for Automatic insertion
• High Conductance
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
100 Volts
POWER
200mWatts
0.087(2.20)
0.074(1.90)
0.010(0.25)
0.018(0.45)
0.006(0.15)
0.010(0.25)
0.003(0.08)
0.040(1.00)
0.031(0.80)
0.044(1.10)
MAX.
0.056(1.40)
0.047(1.20)
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
0.012(0.30)
0.005(0.15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%.
PARAMETER
Marking Code
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average),Half Wave Rectification With
Resistive Load and f>50Hz
Peak Forward Surge Current, 1.0s
Power Dissipation Derate Above 25
O
C
SYMBOL
-
V
R
V
RM
I
O
I
FSM
P
TOT
BAS16TW
16T
BAW56DW
JC
75
100
150
4.0
200
0.715@I
F
=0.001A
0.855@I
F
=0.01A
1.0@I
F
=0.05A
1.25@I
F
=0.15A
0.03
2.5
1.5
4.0
625
-55 to +150
Fig.48
Fig.51
Fig.52
Fig.32
O
BAV70DW
JA
0.004(0.10)
0.000(0.00)
• Weight: approximately 0.006gram
BAV99S
JB
0.087(2.20)
0.078(2.00)
UNITS
-
V
V
mA
A
mW
Maximum Forward Voltage
Maximum DC Reverse Current at 25V
75V
Maximum Junction Capacitance (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
Operating Junction and Storage Temperature Range
Circuit Figure
V
F
V
I
R
C
J
T
RR
R
JA
T
J,
T
STG
A
pF
ns
C/W
O
C
NOTE : 1. Reverse Bias Voltage = 0. f=1MHz
2. I
F
=10mA to I
R
=1mA. V
R
=6V. Load=100
February 7,2013-REV.02
PAGE . 1
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