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BAV301_R2_00001

Description
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, MELF-2
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BAV301_R2_00001 Overview

Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, MELF-2

BAV301_R2_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionMELF-2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.3 W
Maximum repetitive peak reverse voltage120 V
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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BAV301~BAV303
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES
VOLTAGE
120 to 250 Volts
POWER
300 mWatts
MICRO-MELF
Unit : inch (mm)
FEATURES
• Fast switching Speed.
• Surface Mount Package Ideally Suited For Automatic Insertion.
• Silicon Epitaxal Planar Construction.
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
• Case: Micro Melf, Glass
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: Cathode Band
• Marking: Cathode Band Only
• Weight: 0.01 grams
• Packing information
T/R - 2.5K per 7" plastic Reel
.043(1.1)
.008(0.2)
.008(0.2)
.079(2.0)
.071(1.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
J
=25°C unless otherwise noted)
PA RA M E TE R
R e ve r s e V o l t a g e
P e a k R e ve r s e V o l t a g e
R e c t i f i e d C ur r e nt ( A ve r a g e ) , H a l f Wa ve R e c t i f i c a t i o n w i t h
R e s i s t i ve L o a d a nd f > = 5 0 H z
P e a k F o r w a r d S ur g e C ur r e nt , t = 1 0 0 0 m s
P o w e r D i s s i p a t i o n D e r a t e A b o ve a t 2 5
O
C
M a x i m u m F o r w a r d V o l t a g e , I
F
= 1 0 0 m A
M a xi m um D C R e ve r s e C ur r e nt a t R a t e d D C B l o c k i ng
Vo lt a g e T
J
= 2 5
O
C
Ty p i c a l J u n c t i o n C a p a c i t a n c e ( N o t e 1 )
M a xi m um R e ve r s e R e c o ve r y ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i o n J u n c t i o n S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
R
V
RRM
I
O
I
F S M
P
D
V
F
I
R
C
J
t
rr
R
θ
J A
T
S T G
B AV 3 0 1
100
120
B AV 3 0 2
150
200
200
1 .0
300
1 .0
0 .1
3 .0
75
350
-6 5 to +1 7 5
B AV 3 0 3
200
250
.040(1.0)
.048(1.2)DIA.
U N IT S
V
V
mA
A
mW
V
µ
A
pF
ns
O
C / W
O
C
NOTE:
1. CJ at V
R
=0, f=1MHZ
2. From I
F
=10mA to I
R
=-1mA, V
R
=6Volts, R
L
=100Ω
STAD-JAN.08.2009
PAGE . 1
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